Maximum Continuous Drain Current:
30 A
Width:
3.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.7V
Package Type:
HSMT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 4.5 V, 24.5 nC @ 10 V
Channel Type:
N
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Series:
RQ3L090GN
Maximum Gate Source Voltage:
±20 V
Height:
0.85mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
21.4 mΩ
This is N-channel MOSFET 30 A 60 V RQ3L090GN 8-Pin HSMT manufactured by ROHM. The manufacturer part number is RQ3L090GNTB. While 30 a of maximum continuous drain current. Furthermore, the product is 3.1mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.7v of maximum gate threshold voltage. The package is a sort of hsmt. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 13 nc @ 4.5 v, 24.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 20 w maximum power dissipation. The product rq3l090gn, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.85mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 21.4 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.