ROHM RQ3E120ATTB P-channel MOSFET, 39 A, 30 V RQ3E120AT, 8-Pin HSMT
Product Information
Maximum Continuous Drain Current:
39 A
Width:
3.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
HSMT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
62 nC @ 10 V
Channel Type:
P
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Series:
RQ3E120AT
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
11.3 mΩ
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM RQ3E120ATTB P-channel MOSFET, 39 A, 30 V RQ3E120AT, 8-Pin HSMT. You can also check on our website or by contacting our customer support team for further order details on ROHM RQ3E120ATTB P-channel MOSFET, 39 A, 30 V RQ3E120AT, 8-Pin HSMT.
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Yes. We ship RQ3E120ATTB Internationally to many countries around the world.
This is P-channel MOSFET 39 A 30 V RQ3E120AT 8-Pin HSMT manufactured by ROHM. The manufacturer part number is RQ3E120ATTB. While 39 a of maximum continuous drain current. Furthermore, the product is 3.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of hsmt. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 62 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 20 w maximum power dissipation. The product rq3e120at, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Its forward diode voltage is 1.2v . It provides up to 11.3 mω maximum drain source resistance.
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