This is N-channel MOSFET 2 A 60 V 3+Tab-Pin MPT manufactured by ROHM. The manufacturer part number is RJP020N06T100. While 2 a of maximum continuous drain current. Furthermore, the product is 2.7mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of sot-89. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5 nc @ 4 v. The product is available in [Cannel Type] channel. Its accurate length is 4.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 300 mω maximum drain source resistance.
Datasheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is N-channel MOSFET 2 A 60 V 3+Tab-Pin MPT manufactured by ROHM. The manufacturer part number is RJP020N06T100. While 2 a of maximum continuous drain current. Furthermore, the product is 2.7mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of sot-89. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5 nc @ 4 v. The product is available in [Cannel Type] channel. Its accurate length is 4.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 300 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.