This is P-channel MOSFET 200 mA 20 V 3-Pin SOT-416FL manufactured by ROHM. The manufacturer part number is RE1C002ZPTL. While 200 ma of maximum continuous drain current. Furthermore, the product is 0.96mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.3v of maximum gate threshold voltage. The package is a sort of sc-75. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.4 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of ±10 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 9.6 ω maximum drain source resistance.
Datasheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is P-channel MOSFET 200 mA 20 V 3-Pin SOT-416FL manufactured by ROHM. The manufacturer part number is RE1C002ZPTL. While 200 ma of maximum continuous drain current. Furthermore, the product is 0.96mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.3v of maximum gate threshold voltage. The package is a sort of sc-75. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.4 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of ±10 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 9.6 ω maximum drain source resistance.
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Don’t hesitate to ask questions for better clarification.