Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

ROHM R6030ENZ1C9 N-channel MOSFET, 30 A, 600 V, 3-Pin TO-247

R6030ENZ1C9 ROHM  N-channel MOSFET, 30 A, 600 V, 3-Pin TO-247
ROHM

Product Information

Category:
Power MOSFET
Dimensions:
16.13 x 5.21 x 21.34mm
Maximum Continuous Drain Current:
30 A
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
85 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2100 pF @ 25 V
Length:
16.13mm
Pin Count:
3
Forward Transconductance:
16S
Typical Turn-Off Delay Time:
190 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
120 W
Maximum Gate Source Voltage:
±20 V
Height:
21.34mm
Typical Turn-On Delay Time:
40 ns
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
250 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 30 A 600 V 3-Pin TO-247 manufactured by ROHM. The manufacturer part number is R6030ENZ1C9. It is of power mosfet category . The given dimensions of the product include 16.13 x 5.21 x 21.34mm. While 30 a of maximum continuous drain current. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 85 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2100 pf @ 25 v . Its accurate length is 16.13mm. It contains 3 pins. The forward transconductance is 16s . Whereas, its typical turn-off delay time is about 190 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 120 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 21.34mm. In addition, it has a typical 40 ns turn-on delay time . Its forward diode voltage is 1.5v . It provides up to 250 mω maximum drain source resistance.

pdf icon
Datasheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search R6030ENZ1C9 on website for other similar products.
We accept all major payment methods for all products including ET16782140. Please check your shopping cart at the time of order.
You can order ROHM brand products with R6030ENZ1C9 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM R6030ENZ1C9 N-channel MOSFET, 30 A, 600 V, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on ROHM R6030ENZ1C9 N-channel MOSFET, 30 A, 600 V, 3-Pin TO-247.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16782140 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16782140.
Yes. We ship R6030ENZ1C9 Internationally to many countries around the world.