This is N-channel MOSFET 20 A 600 V 3-Pin TO-247 manufactured by ROHM. The manufacturer part number is R6020KNZ1C9. While 20 a of maximum continuous drain current. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 231 w maximum power dissipation. It features a maximum gate source voltage of ±20 (static) v, ±30 v. In addition, the height is 21.34mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 360 mω maximum drain source resistance.
Datasheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is N-channel MOSFET 20 A 600 V 3-Pin TO-247 manufactured by ROHM. The manufacturer part number is R6020KNZ1C9. While 20 a of maximum continuous drain current. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 231 w maximum power dissipation. It features a maximum gate source voltage of ±20 (static) v, ±30 v. In addition, the height is 21.34mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 360 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.