This is Dual P-channel MOSFET 2 A 12 V QS6J11 6-Pin SOT-457 (SC-74) manufactured by ROHM. The manufacturer part number is QS6J11TR. It has a maximum of 12 v drain source voltage. With a typical gate charge at Vgs includes 6.5 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.25 w maximum power dissipation. The product qs6j11, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.95mm. Furthermore, the product is 1.8mm wide. Its accurate length is 3mm. It provides up to 400 mω maximum drain source resistance. The package is a sort of tsmt-6. It consists of 2 elements per chip. While 2 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.3v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers dual base transistor configuration.
QS6J11, Dual P-Channel Power MOSFET (-12V -2A)(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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You will get a confirmation email regarding your order of ROHM QS6J11TR Dual P-channel MOSFET, 2 A, 12 V QS6J11, 6-Pin SOT-457 (SC-74). You can also check on our website or by contacting our customer support team for further order details on ROHM QS6J11TR Dual P-channel MOSFET, 2 A, 12 V QS6J11, 6-Pin SOT-457 (SC-74).
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This is Dual P-channel MOSFET 2 A 12 V QS6J11 6-Pin SOT-457 (SC-74) manufactured by ROHM. The manufacturer part number is QS6J11TR. It has a maximum of 12 v drain source voltage. With a typical gate charge at Vgs includes 6.5 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.25 w maximum power dissipation. The product qs6j11, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.95mm. Furthermore, the product is 1.8mm wide. Its accurate length is 3mm. It provides up to 400 mω maximum drain source resistance. The package is a sort of tsmt-6. It consists of 2 elements per chip. While 2 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.3v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers dual base transistor configuration.
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Don’t hesitate to ask questions for better clarification.