ROHM QH8MA4TCR Dual N/P-channel MOSFET, 8 (P Channel) A, 9 (N Channel) A, 30 (N Channel) V, 30 (P Channel) V QH8MA4
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
15.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.6 W
Series:
QH8MA4
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5 (N Channel) V, 2.5 (P Channel) V
Height:
0.8mm
Width:
2.5mm
Length:
3.1mm
Maximum Drain Source Resistance:
23.7 mΩ
Package Type:
TSMT
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
8 (P Channel) A, 9 (N Channel) A
Minimum Gate Threshold Voltage:
1 (N Channel) V, 1 (P Channel) V
Forward Diode Voltage:
1.2V
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
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FAQs
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You can order ROHM brand products with QH8MA4TCR directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM QH8MA4TCR Dual N/P-channel MOSFET, 8 (P Channel) A, 9 (N Channel) A, 30 (N Channel) V, 30 (P Channel) V QH8MA4. You can also check on our website or by contacting our customer support team for further order details on ROHM QH8MA4TCR Dual N/P-channel MOSFET, 8 (P Channel) A, 9 (N Channel) A, 30 (N Channel) V, 30 (P Channel) V QH8MA4.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16782113 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16782113.
Yes. We ship QH8MA4TCR Internationally to many countries around the world.
This is Dual N/P-channel MOSFET 8 (P Channel) A 9 (N Channel) A 30 (N Channel) V 30 (P Channel) V QH8MA4 manufactured by ROHM. The manufacturer part number is QH8MA4TCR. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 15.5 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.6 w maximum power dissipation. The product qh8ma4, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. The product carries 2.5 (n channel) v, 2.5 (p channel) v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 2.5mm wide. Its accurate length is 3.1mm. It provides up to 23.7 mω maximum drain source resistance. The package is a sort of tsmt. It consists of 2 elements per chip. While 8 (p channel) a, 9 (n channel) a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1 (n channel) v, 1 (p channel) v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
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