Taiwan Semi TSM1NB60CH C5G N-channel MOSFET, 1 A, 600 V, 3-Pin IPAK
Product Information
Maximum Continuous Drain Current:
1 A
Width:
2.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.1 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
39 W
Maximum Gate Source Voltage:
±30 V
Height:
6.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
10 Ω
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Yes. We ship TSM1NB60CH C5G Internationally to many countries around the world.
This is Taiwan Semi N-channel MOSFET 1 A 600 V 3-Pin IPAK manufactured by Taiwan Semiconductor. The manufacturer part number is TSM1NB60CH C5G. While 1 a of maximum continuous drain current. Furthermore, the product is 2.3mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.1 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 39 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 6.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 10 ω maximum drain source resistance.
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