Taiwan Semi TSM090N03CP ROG N-channel MOSFET, 55 A, 30 V, 3 + Tab-Pin DPAK
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
7.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
2.3mm
Width:
5.8mm
Length:
6.5mm
Maximum Drain Source Resistance:
13 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
55 A
Minimum Gate Threshold Voltage:
1V
Forward Diode Voltage:
1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is Taiwan Semi N-channel MOSFET 55 A 30 V 3 + Tab-Pin DPAK manufactured by Taiwan Semiconductor. The manufacturer part number is TSM090N03CP ROG. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 7.5 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 5.8mm wide. Its accurate length is 6.5mm. It provides up to 13 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 55 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. Its forward diode voltage is 1v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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