ROHM RDR005N25TL N-channel MOSFET, 500 mA, 250 V, 3-Pin SOT-346T
Product Information
Category:
Power MOSFET
Dimensions:
3 x 1.8 x 0.95mm
Maximum Continuous Drain Current:
500 mA
Transistor Material:
Si
Width:
1.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
3V
Package Type:
SOT-346T (SC-96)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
70 pF @ 25 V
Length:
3mm
Pin Count:
3
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Typical Turn-On Delay Time:
6 ns
Maximum Drain Source Resistance:
18 Ω
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Yes. We ship RDR005N25TL Internationally to many countries around the world.
This is N-channel MOSFET 500 mA 250 V 3-Pin SOT-346T manufactured by ROHM. The manufacturer part number is RDR005N25TL. It is of power mosfet category . The given dimensions of the product include 3 x 1.8 x 0.95mm. While 500 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.8mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of sot-346t (sc-96). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 70 pf @ 25 v . Its accurate length is 3mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 21 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.95mm. In addition, it has a typical 6 ns turn-on delay time . It provides up to 18 ω maximum drain source resistance.
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