Diodes Inc DMN2550UFA-7B N-channel MOSFET, 600 mA, 20 V, 3-Pin X2-DFN0806
Product Information
Maximum Continuous Drain Current:
600 mA
Transistor Material:
Si
Width:
0.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
X2-DFN0806
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.88 nC @ 4.5 V
Channel Type:
N
Length:
0.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
360 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
1 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship DMN2550UFA-7B Internationally to many countries around the world.
This is Diodes Inc N-channel MOSFET 600 mA 20 V 3-Pin X2-DFN0806 manufactured by DiodesZetex. The manufacturer part number is DMN2550UFA-7B. While 600 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 0.85mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of x2-dfn0806. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.88 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 0.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 360 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.35mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 1 ω maximum drain source resistance.
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