Fuji Electric FMW79N60S1HF N-channel MOSFET, 68 A, 600 V Super J-MOS, 3-Pin TO-247
Product Information
Maximum Continuous Drain Current:
68 A
Transistor Material:
Si
Width:
5.03mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
203 nC @ 10 V
Channel Type:
N
Length:
15.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
545 W
Series:
Super J-MOS
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.95mm
Maximum Drain Source Resistance:
40 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Fuji Electric FMW79N60S1HF N-channel MOSFET, 68 A, 600 V Super J-MOS, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on Fuji Electric FMW79N60S1HF N-channel MOSFET, 68 A, 600 V Super J-MOS, 3-Pin TO-247.
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Yes. We ship FMW79N60S1HF Internationally to many countries around the world.
This is N-channel MOSFET 68 A 600 V Super J-MOS 3-Pin TO-247 manufactured by Fuji Electric. The manufacturer part number is FMW79N60S1HF. While 68 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.03mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 203 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 545 w maximum power dissipation. The product super j-mos, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.95mm. It provides up to 40 mω maximum drain source resistance.
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