Infineon IRF1405PBF N-channel MOSFET, 169 A, 55 V HEXFET, 3-Pin TO-220AB
Product Information
Maximum Drain Source Voltage:
55 V
Typical Gate Charge @ Vgs:
170 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
N
Minimum Gate Threshold Voltage:
2V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
5 mΩ
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
169 A
Transistor Material:
Si
Height:
8.77mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IRF1405PBF Internationally to many countries around the world.
This is N-channel MOSFET 169 A 55 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRF1405PBF. It has a maximum of 55 v drain source voltage. With a typical gate charge at Vgs includes 170 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 330 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 2v. The product carries 4v of maximum gate threshold voltage. It provides up to 5 mω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 169 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 8.77mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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