STMicroelectronics BUL89
Product Information
Transistor Type:
NPN
Dimensions:
10.4 x 4.6 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
110 W
Maximum Collector Emitter Voltage:
850 V
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
12 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
12 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
400 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 5A, 5V
edacadModel:
BUL89 Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
5V @ 2.4A, 12A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1037768
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
110 W
Base Product Number:
BUL89
ECCN:
EAR99
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FAQs
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You can order STMicroelectronics brand products with BUL89 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of STMicroelectronics BUL89. You can also check on our website or by contacting our customer support team for further order details on STMicroelectronics BUL89.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12001397 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12001397.
Yes. We ship BUL89 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is BUL89. The transistor is a npn type. The given dimensions of the product include 10.4 x 4.6 x 15.75mm. The product is available in through hole configuration. Provides up to 110 w maximum power dissipation. Whereas features a 850 v of collector emitter voltage (max). It features a 9 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 12 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 12 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 400 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 10 @ 5a, 5v is the minimum DC current gain at given voltage. The 5v @ 2.4a, 12a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa is the maximum current at collector cutoff. to-220 is the supplier device package value. The maximum power of the product is 110 w. Moreover, it corresponds to bul89, a base product number of the product. The product is designated with the ear99 code number.
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