Nexperia BSH105,215 N-channel MOSFET, 1.05 A, 20 V, 3-Pin SOT-23

BSH105-215 Nexperia BSH105,215 N-channel MOSFET, 1.05 A, 20 V, 3-Pin SOT-23
BSH105,215
Nexperia

Product Information

Maximum Continuous Drain Current:
1.05 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.85V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.9 nC @ 4.5 V
Channel Type:
N
Length:
3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
417 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
200 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 1.05 A 20 V 3-Pin SOT-23 manufactured by Nexperia. The manufacturer part number is BSH105,215. While 1.05 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.85v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.9 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 417 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 200 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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