NXP PHT6NQ10T,135 N-channel MOSFET, 3 A, 100 V, 4-Pin SOT-223 (SC-73)
Product Information
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Minimum Operating Temperature:
-65 °C
Maximum Drain Source Resistance:
90 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is NXP N-channel MOSFET 3 A 100 V 4-Pin SOT-223 (SC-73) manufactured by Nexperia. The manufacturer part number is PHT6NQ10T,135. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.8 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -65 °c. It provides up to 90 mω maximum drain source resistance.
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