ROHM RGTV80TK65GVC11 Single IGBT, 23 A 650 V, 3-Pin TO-3PFM, Through Hole
Product Information
Mounting Type:
Through Hole
Maximum Power Dissipation:
85 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
23 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-3PFM
Configuration:
Single
Pin Count:
3
Transistor Configuration:
Common Emitter
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This is Single IGBT 23 A 650 V 3-Pin TO-3PFM Through Hole manufactured by ROHM. The manufacturer part number is RGTV80TK65GVC11. The product is available in through hole configuration. Provides up to 85 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 23 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-3pfm. The product is available in single configuration. It contains 3 pins. The product offers common emitter transistor configuration.
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