Field Stop Trench IGBT
Product Information
Dimensions:
16 x 5 x 21mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
76 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Gate Capacitance:
1730pF
Maximum Continuous Collector Current:
33 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-3PFM
Minimum Operating Temperature:
-40 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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FAQs
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You can order ROHM brand products with RGTV60TK65GVC11 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Field Stop Trench IGBT. You can also check on our website or by contacting our customer support team for further order details on Field Stop Trench IGBT.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18048845 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18048845.
Yes. We ship RGTV60TK65GVC11 Internationally to many countries around the world.
This is Field Stop Trench IGBT manufactured by ROHM. The manufacturer part number is RGTV60TK65GVC11. The given dimensions of the product include 16 x 5 x 21mm. The product is available in through hole configuration. Provides up to 76 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . It has approximately 1730pf gate capacitance . The product has a maximum 33 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-3pfm. Whereas, the minimum operating temperature of the product is -40 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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