ROHM RGT30NS65DGC9 P-channel IGBT, 30 A 650 (Minimum) V, 3+Tab-Pin I2PAK
Product Information
Dimensions:
10.1 x 4.5 x 9mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
133 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
P
Maximum Continuous Collector Current:
30 A
Maximum Gate Emitter Voltage:
30V
Package Type:
TO-262
Minimum Operating Temperature:
-40 °C
Gate Capacitance:
780pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3+Tab
Transistor Configuration:
Single
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You can order ROHM brand products with RGT30NS65DGC9 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM RGT30NS65DGC9 P-channel IGBT, 30 A 650 (Minimum) V, 3+Tab-Pin I2PAK. You can also check on our website or by contacting our customer support team for further order details on ROHM RGT30NS65DGC9 P-channel IGBT, 30 A 650 (Minimum) V, 3+Tab-Pin I2PAK.
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Yes. We ship RGT30NS65DGC9 Internationally to many countries around the world.
This is P-channel IGBT 30 A 650 (Minimum) V 3+Tab-Pin I2PAK manufactured by ROHM. The manufacturer part number is RGT30NS65DGC9. The given dimensions of the product include 10.1 x 4.5 x 9mm. The product is available in through hole configuration. Provides up to 133 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum 30v gate emitter voltage . The package is a sort of to-262. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 780pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3+tab pins. The product offers single transistor configuration.
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