ROHM RGTH80TK65DGC11 IGBT, 31 A 650 V, 3-Pin TO-3PFM
Product Information
Dimensions:
16 x 5 x 21mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
66 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
31 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-3PFM
Minimum Operating Temperature:
-40 °C
Gate Capacitance:
85pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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FAQs
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You can order ROHM brand products with RGTH80TK65DGC11 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM RGTH80TK65DGC11 IGBT, 31 A 650 V, 3-Pin TO-3PFM. You can also check on our website or by contacting our customer support team for further order details on ROHM RGTH80TK65DGC11 IGBT, 31 A 650 V, 3-Pin TO-3PFM.
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Yes. We ship RGTH80TK65DGC11 Internationally to many countries around the world.
This is IGBT 31 A 650 V 3-Pin TO-3PFM manufactured by ROHM. The manufacturer part number is RGTH80TK65DGC11. The given dimensions of the product include 16 x 5 x 21mm. The product is available in through hole configuration. Provides up to 66 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 31 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-3pfm. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 85pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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