Semikron SEMiX603GB12E4p, SEMiX®3p Series IGBT Transistor Module, 1.1 kA max, 1200 V, Through Hole

SEMiX603GB12E4p Semikron , SEMiX®3p Series IGBT Transistor Module, 1.1 kA max, 1200 V, Through Hole
Semikron

Product Information

Priced to Clear:
Yes
Dimensions:
150 x 62.4 x 17mm
Mounting Type:
Through Hole
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
1.1 kA
Maximum Gate Emitter Voltage:
20V
Package Type:
SEMiX®3p
Minimum Operating Temperature:
-40 °C
Configuration:
Series
Maximum Operating Temperature:
+175 °C
Pin Count:
11
Transistor Configuration:
Series
RoHs Compliant
Checking for live stock

This is SEMiX®3p Series IGBT Transistor Module 1.1 kA max 1200 V Through Hole manufactured by Semikron. The manufacturer part number is SEMiX603GB12E4p. Priced to Clear Options - yes. The given dimensions of the product include 150 x 62.4 x 17mm. The product is available in through hole configuration. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 1.1 ka continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of semix®3p. Whereas, the minimum operating temperature of the product is -40 °c. The product is available in series configuration. It has a maximum operating temperature of +175 °c. It contains 11 pins. The product offers series transistor configuration.

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Semikron Driver Selection Guide(Technical Reference)
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SEMiX603GB12E4p Datasheet(Technical Reference)
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Semikron SEMiX package flyer(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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