Fuji Electric 2MBi200U4H-120-50, M249 Series IGBT Module, 200 A max, 1200 V, Panel Mount

Enrgtech Part No: ET13959567
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Manufacturer Part No:
2MBi200U4H-120-50
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Manufacturer: Fuji Electric

2MBi200U4H-120-50 Fuji Electric , M249 Series IGBT Module, 200 A max, 1200 V, Panel Mount

Product Information

Configuration:

Series

Dimensions:

108 x 62 x 30mm

Mounting Type:

Panel Mount

Maximum Power Dissipation:

1.04 kW

Maximum Continuous Collector Current:

200 A

Maximum Collector Emitter Voltage:

1200 V

Height:

30mm

Width:

62mm

Length:

108mm

Maximum Gate Emitter Voltage:

±20V

Package Type:

M249

Channel Type:

Checking for live stock

The Fuji Electric 2MBi200U4H-120-50 is a high-performance, dual IGBT module from the M249 series, optimised for demanding power applications. It supports up to 200 A continuous current and 1200 V collector-emitter voltage, enabling robust performance in inverters, motor drives, and renewable energy systems. The compact module (108 × 62 × 30 mm) integrates advanced semiconductor design for low switching losses and thermal stability. With a ±20 V gate-emitter range and the ability to operate up to 150 °C, it’s engineered to deliver consistent efficiency and durability under strenuous conditions.

Top Reasons to Choose the 2MBi200U4H-120-50 Panel-Mount IGBT Module:

Selecting this Fuji Electric IGBT module ensures you get a reliable, high-current, high-voltage IGBT solution with excellent thermal performance and switching efficiency. The module is tailored for demanding industrial and power conversion systems.

Distinctive Features of the 2MBi200U4H-120-50 IGBT Module:

200 A continuous collector current rating
1200 V maximum collector-emitter voltage
Panel-mount M249 package
Compact dimensions: 108 × 62 × 30 mm
±20 V gate-emitter voltage tolerance
Operating temperature up to 150 °C
Dual-IGBT (series) transistor configuration
Max power dissipation ~1.04 kW.

Dual IGBT Module, 1200V(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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