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SRAM Of Upgraded Versions Available Online

New items

CY62137FV30LL-45BVXI, Cypress Semiconductor

Asynchronous Static RAM Memory, Cypress Semiconductor SRAM (Static Random Access Memory)

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New items

CY7C1021DV33-10ZSXI, Infineon

The Infineon Static RAM is a high performance CMOS static RAM organized as 65536 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected. High speed Low CMOS standby power CMOS for optimum speed and power Automatic power down when deselected Independent control of upper and lower bits

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RMLV1616AGSA-5S2#AA0, Renesas Electronics

Low Power SRAM, RMLV Series, Renesas Electronics The RMLV Series of high performance advanced static RAMs has realized higher density, low current consumption, and offers low power standby power dissipation. Single 2.7V to 3.6V power supply Access time: 45ns (max.) Equal access and cycle times Common data input and output with three state output All inputs and outputs are TTL compatible Suitable for battery backup operation SRAM (Static Random Access Memory)

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New items

DS1225AB-85+, Maxim

Static RAM, Maxim Integrated SRAM (Static Random Access Memory)

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New items

70V25L15PFG, Renesas Electronics

The Renesas Electronics 70V25 series high-speed 8K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or wider memory system applications. It has 100 lead count and has TQFP package type. The SRAM has C temperature grade. Separate upper-byte and lower-byte control for multiplexed bus compatibility 70V25 easily expands data bus width to 32 bits or more BUSY and Interrupt Flag On-chip port arbitration logic

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71V416L10PHG, Renesas Electronics

The Renesas Electronics 71V416 series 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. It has 44 lead count and has TSOP package type. The SRAM has C temperature grade. JEDEC Centre Power / GND pinout for reduced noise. Equal access and cycle times- Commercial and Industrial: 10/12/15ns One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly LVTTL-compatible

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71V416S10PHGI, Renesas Electronics

The Renesas Electronics 71V416 series 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. It has 44 lead count and has TSOP package type. The SRAM has I temperature grade. JEDEC Centre Power / GND pinout for reduced noise. Equal access and cycle times- Commercial and Industrial: 10/12/15ns One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly LVTTL-compatible

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New items

AS6C6416-55TIN, Alliance Memory

The Alliance Memory AS6C6416 is a 67,108,864-bit low power CMOS static random access memory organized as 4,194,304 words by 16 bits or 8,388,608 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. Fully static operation Tri-state output

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New items

AS6C62256-55SIN, Alliance Memory

Static RAM, Alliance Memory SRAM (Static Random Access Memory)

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New items

AS6C62256-55PCN, Alliance Memory

Static RAM, Alliance Memory SRAM (Static Random Access Memory)

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New items

AS6C4008-55TIN, Alliance Memory

Static RAM, Alliance Memory SRAM (Static Random Access Memory)

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New items

47C16-I/P, Microchip

The Microchip Technology Inc 47C04 EERAM is a 4Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 512 x 8 bits and utilizes the I2C serial interface. The 47C04 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. 4Kbit SRAM with EEPROM Back Up Automatic Store to EEPROM upon power-down (using optional external capacitor) Automatic Recall to SRAM Array upon power-up Hardware Store Pin for manual Store Operations Software commands for initiating Store and Recall Operations Store Time 40ms (max)

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