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Showing Results For: Flash Memory
Flash Memory
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S25FS512SAGMFI011, Cypress Semiconductor
The S25FS512S connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output(Single I/O or SIO) is supported as well as optional twobit (Dual I/O or DIO) and fourbit wide Quad I/O (QIO) or Quad PeripheralInterface (QPI) serial commands. This multiple-width interface is called SPI Multi-I/O or MIO. In addition, there are Double Data Rate(DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock.The FS-S Eclipse architecture features a Page Programming Buffer that allows up to 512 bytes to be programmed in one operation,resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using S25FS512S devices at the higher clockrates supported, with Quad or DDR-Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories, while reducing signal count dramatically.The S25FS512S products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. They are an excellent solution for systems with limited space, signal connections and power. They are ideal forcode shadowing to RAM, executing code directly (XIP) and storing reprogrammable data.
New items
VA001-64G, Okdo
64GB Plug on eMMC 5.1 flash storage module for ROCK single board computers.
Benefits of the eMMC flash storage module for ROCK
Ideal memory solution for ROCK single board computers - eMMC modules benefit from fast speeds and supreme power efficiency. Its the perfect memory and storage solution for a huge range of electronics.
Not just for ROCK - This eMMC 5.1 module is optimised for use with ROCK single board computers, but it is also compatible with ODroid, and PINE.
A memory size to suit you - We also offer eMMC 5.1 modules in 16GB, 32GB, or 128GB.
New items
New items
S29GL064N90TFI070, Cypress Semiconductor
Flash Memory using MirrorBit Technology, Cypress Semiconductor (Spansion)
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
New items
S34ML02G100TFI000, Cypress Semiconductor
SLC NAND Flash Memory, Cypress Semiconductor
3V (ML-1) High Reliability NAND Flash for Embedded
ML Nand Flash Memory organisation format range:
128 M x 8 bit, 64 M x 16 bit -
S34ML01G100BHI000
,
S34ML01G100TFI000
128 M x 16 bit, 256 M x 8 bit -
S34ML02G100BHI000
,
S34ML02G100TFI000
256M x 16 bit, 512M x 8 bit -
S34ML04G100BHI000
,
S34ML04G100TFI000
Open NAND Flash Interface (ONFI) 1.0
NAND Flash Memory
New items
S29GL256S10TFIV20, Infineon
CMOS 3.0 Volt Core with Versatile I/O
65 nm MirrorBit Eclipse Technology
Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
Versatile I/O Feature
Wide I/O voltage range (VIO): 1.65 V to VCC
´
16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer
Programming in Page multiples, up to a maximum of 512 bytes
Single word and multiple program on same word options
Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction
Sector Erase
Uniform 128-kbyte sectors
Suspend and Resume commands for Program and Erase operations
Status Register, Data Polling, and Ready/Busy pin methods to determine device status
Advanced Sector Protection (ASP)
Volatile and non-volatile protection methods for each sector
Separate 1024-byte One Time Program (OTP) array with two lockable regions
Common Flash Interface (CFI) parameter table
Temperature Range / Grade
Industrial (-40°C to +85°C)
Industrial Plus(-40°C to +105°C)
100,000 Program / Erase Cycles
20 Years Data Retention
Packaging Options
56-pin TSOP
64-ball LAA Fortified BGA, 13 mm
´
11 mm
64-ball LAE Fortified BGA, 9 mm
´
9 mm
56-ball VBU Fortified BGA, 9 mm
´
7 mm
New items
S25FL128LAGNFM010, Infineon
The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly and storing reprogrammable data.
Pb free package
Double data rate option
Quad peripheral interface option
Minimum 20 year data retention
Clock polarity and phase modes 0 and 3
Minimum 100000 program and erase cycles
New items
S25FL256LAGNFV010, Infineon
The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly and storing reprogrammable data.
Pb free package
Double data rate option
Quad peripheral interface option
Minimum 20 year data retention
Clock polarity and phase modes 0 and 3
Minimum 100000 program and erase cycles
New items
S25FL512SAGBHIA13, Infineon
The Infineon Flash Memory offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage. Executing code directly from flash memory is often called Execute in Place or XIP. By using FL S devices at the higher clock rates supported, with QIO or DDR QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.
Pb free package
SPI with multi IO
Advance sector protection
Minimum 20 year data retention
CMOS 3.0 V core with versatile IO
Minimum 100000 program and erase cycles
New items
S25FL512SAGMFIR10, Infineon
The Infineon Flash Memory offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage. Executing code directly from flash memory is often called Execute in Place or XIP. By using FL S devices at the higher clock rates supported, with QIO or DDR QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.
Pb free package
SPI with multi IO
Advance sector protection
Minimum 20 year data retention
CMOS 3.0 V core with versatile IO
Minimum 100000 program and erase cycles
New items
S25FL128LAGNFV010, Infineon
The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly and storing re programmable data.
Double data rate option
Quad peripheral interface option
Minimum 20 year data retention
Serial flash discoverable parameters
Minimum 100000 program erase cycles
Clock polarity and phase modes 0 and 3