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Flash Memory Of Upgraded Versions Available Online

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S25FS512SAGMFI011, Cypress Semiconductor

The S25FS512S connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output(Single I/O or SIO) is supported as well as optional twobit (Dual I/O or DIO) and fourbit wide Quad I/O (QIO) or Quad PeripheralInterface (QPI) serial commands. This multiple-width interface is called SPI Multi-I/O or MIO. In addition, there are Double Data Rate(DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock.The FS-S Eclipse architecture features a Page Programming Buffer that allows up to 512 bytes to be programmed in one operation,resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using S25FS512S devices at the higher clockrates supported, with Quad or DDR-Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories, while reducing signal count dramatically.The S25FS512S products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. They are an excellent solution for systems with limited space, signal connections and power. They are ideal forcode shadowing to RAM, executing code directly (XIP) and storing reprogrammable data.

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S29AL008J70TFI013, Cypress Semiconductor

The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch) and 48pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0, the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. Duringerase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.

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S70FL01GSAGMFI011, Cypress Semiconductor

Serial-SPI NOR Flash Memory, Cypress Semiconductor High performance Low pin-count Quad SPI (Serial Peripheral Interface) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

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S25FL256SAGMFIG01, Cypress Semiconductor

Serial-SPI NOR Flash Memory, Cypress Semiconductor High performance Low pin-count Quad SPI (Serial Peripheral Interface) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

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ASFC4G31M-51BIN, Alliance Memory

The Alliance Memory 4GB eMMC device is a high performance embedded MMC solution designed for embedded NAND flash applications. It supports eMMC/JEDEC 5.1 industry standard and is backward compatible with eMMC 4.5 & 5.0 version. Full Backward compatibility Programmable bus width is 1 bit(Default), 4bit and 8bit Data bus MMC I/F Clock Frequency is 0 to 200MHz MMC I/F Boot Frequency is 0 to 52MHz Operating Temperature is 40 to 85 °C Operating Power Supply is VCC : 2.7V to 3.6V (for NAND Flash Memory) VCCQ is 1.7V to 1.95V or 2.7V to 3.6V (for Interface)

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ASFC8G31M-51BIN, Alliance Memory

The Alliance Memory 8GB eMMC device is a high performance embedded MMC solution designed for embedded NAND flash applications. It supports eMMC/JEDEC 5.1 industry standard and is backward compatible with eMMC 4.5 & 5.0 version. Full Backward compatibility Programmable bus width is 1 bit(Default), 4bit and 8bit Data bus MMC I/F Clock Frequency is 0 to 200MHz MMC I/F Boot Frequency is 0 to 52MHz Operating Temperature is 40 to 85 °C Operating Power Supply is VCC : 2.7V to 3.6V (for NAND Flash Memory) VCCQ is 1.7V to 1.95V or 2.7V to 3.6V (for Interface)

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S25FL128LAGNFI010, Cypress Semiconductor

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VA001-16G, Okdo

16GB Plug on eMMC 5.1 flash storage module for ROCK single board computers. Benefits of the eMMC flash storage module for ROCK Ideal memory solution for ROCK single board computers - eMMC modules benefit from fast speeds and supreme power efficiency. Its the perfect memory and storage solution for a huge range of electronics. Not just for ROCK - This eMMC 5.1 module is optimised for use with ROCK single board computers, but it is also compatible with ODroid, and PINE. A memory size to suit you - We also offer eMMC 5.1 modules in 32GB, 64GB, or 128GB.

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S29AL008J70TFI010, Cypress Semiconductor

Parallel NOR Flash Memory, Cypress Semiconductor High performance Fast random-access and high bandwidth Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

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S34ML02G100TFI000, Cypress Semiconductor

SLC NAND Flash Memory, Cypress Semiconductor 3V (ML-1) High Reliability NAND Flash for Embedded ML Nand Flash Memory organisation format range: 128 M x 8 bit, 64 M x 16 bit - S34ML01G100BHI000 , S34ML01G100TFI000 128 M x 16 bit, 256 M x 8 bit - S34ML02G100BHI000 , S34ML02G100TFI000 256M x 16 bit, 512M x 8 bit - S34ML04G100BHI000 , S34ML04G100TFI000 Open NAND Flash Interface (ONFI) 1.0 NAND Flash Memory

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S29GL256S10TFIV20, Infineon

CMOS 3.0 Volt Core with Versatile I/O 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) Versatile I/O Feature Wide I/O voltage range (VIO): 1.65 V to VCC ´ 16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction Sector Erase Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range / Grade Industrial (-40°C to +85°C) Industrial Plus(-40°C to +105°C) 100,000 Program / Erase Cycles 20 Years Data Retention Packaging Options 56-pin TSOP 64-ball LAA Fortified BGA, 13 mm ´ 11 mm 64-ball LAE Fortified BGA, 9 mm ´ 9 mm 56-ball VBU Fortified BGA, 9 mm ´ 7 mm

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