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Vishay General Semiconductor - Diodes Division GB35XF120K

Vishay General Semiconductor - Diodes Division

Product Information

Current - Collector (Ic) (Max):
50 A
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Vce(on) (Max) @ Vge, Ic:
3V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Operating Temperature:
150°C (TJ)
Input Capacitance (Cies) @ Vce:
3.475 nF @ 30 V
Package / Case:
ECONO2
Input:
Standard
NTC Thermistor:
No
REACH Status:
REACH Unaffected
Configuration:
Three Phase Inverter
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
NPT
Current - Collector Cutoff (Max):
100 µA
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
-
Power - Max:
284 W
Base Product Number:
GB35
ECCN:
EAR99
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This is manufactured by Vishay General Semiconductor - Diodes Division. The manufacturer part number is GB35XF120K. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. Features 3v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has 150°c (tj) operating temperature range. It holds 3.475 nf @ 30 v of input capacitance. Moreover, the product comes in econo2. Its input values include standard. NTC Thermistor - no. In addition, it is reach unaffected. The product is available in three phase inverter configuration. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT npt type. In addition, 100 µa is the maximum current at collector cutoff. The product is available in chassis mount configuration. The maximum power of the product is 284 w. Moreover, it corresponds to gb35, a base product number of the product. The product is designated with the ear99 code number.

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GB35XF120K(Datasheets)

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