FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
87mOhm @ 15A, 18V
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 18 V
Vgs(th) (Max) @ Id:
4.2V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+18V, -5V
Qualification:
AEC-Q101
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 850 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-247-4
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
236W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
236W
Maximum Drain Source Voltage Vds:
1200V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
-10 to 22 V
Series:
SCT
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
41nC
Standards/Approvals:
AEC-Q101
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
63mΩ
Maximum Continuous Drain Current Id:
30A
Product Type:
MOSFET
Maximum Operating Temperature:
200°C
Pin Count:
4
Mount Type:
Through Hole
