FET Feature:
-
Vgs(th) (Max) @ Id:
4.2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
78mOhm @ 15A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
750 V
Vgs (Max):
4.2V @ 1mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
680 pF @ 400 V
standardLeadTime:
99 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
HU3PAK
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
185W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Automotive Standard:
No
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
750V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
29nC
Series:
SCT060HU
Maximum Gate Source Voltage Vgs:
±18 V
Forward Voltage Vf:
3V
Height:
3.6mm
Width:
19 mm
Length:
14.1mm
Package Type:
HU3PAK
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
58mΩ
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
30A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
7
Mount Type:
Surface
