FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
54mOhm @ 16A, 18V
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 18 V
Vgs(th) (Max) @ Id:
4.2V @ 5mA
REACH Status:
REACH Unaffected
edacadModel:
SCT040H120G3AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
edacadModelUrl:
/en/models/22146804
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+18V, -5V
Qualification:
AEC-Q101
standardLeadTime:
45 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1329 pF @ 800 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
H2PAK-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Forward Voltage Vf:
2.6V
Width:
10.4 mm
Automotive Standard:
AEC-Q101
Typical Gate Charge Qg @ Vgs:
54nC
Package Type:
H2PAK-7
Maximum Continuous Drain Current Id:
40A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
40mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
1200V
Channel Type:
Type N
Length:
15.25mm
Standards/Approvals:
AEC-Q101, RoHS
Pin Count:
7
Mount Type:
Surface
Maximum Power Dissipation Pd:
300W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
22 V
Series:
SCT
Height:
4.8mm
Minimum Operating Temperature:
-55°C
