FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
39.3mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 18 V
Vgs(th) (Max) @ Id:
4.2V @ 5mA
REACH Status:
REACH Unaffected
edacadModel:
SCT027W65G3-4AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
edacadModelUrl:
/en/models/22146727
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Qualification:
AEC-Q101
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1229 pF @ 400 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-247-4
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
313W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
ECCN:
EAR99
Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
313W
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
-10 to 22 V
Series:
SCT
Forward Voltage Vf:
3V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
51nC
Standards/Approvals:
AEC-Q101
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
29mΩ
Maximum Continuous Drain Current Id:
60A
Product Type:
MOSFET
Maximum Operating Temperature:
200°C
Pin Count:
4
Mount Type:
Through Hole
