FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
27mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs:
79.4 nC @ 18 V
Vgs(th) (Max) @ Id:
4.2V @ 5mA
REACH Status:
REACH Unaffected
edacadModel:
SCT018H65G3AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
edacadModelUrl:
/en/models/22146717
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Qualification:
AEC-Q101
standardLeadTime:
45 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2124 pF @ 400 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
H2PAK-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Power Dissipation (Max):
385W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
385W
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
22 V
Series:
SCT
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
79.4nC
Package Type:
H2PAK-7
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
27mΩ
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
55A
Product Type:
MOSFET
Maximum Operating Temperature:
75°C
Pin Count:
7
Mount Type:
Through Hole
