FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
17.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs:
167 nC @ 18 V
Vgs(th) (Max) @ Id:
4.2V @ 10mA
REACH Status:
REACH Unaffected
edacadModel:
SCT015W120G3-4AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
edacadModelUrl:
/en/models/22146703
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Power Dissipation (Max):
673W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3512 pF @ 800 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-247-4
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
129A (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
ECCN:
EAR99
Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
673W
Maximum Drain Source Voltage Vds:
1200V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
4.2 V
Series:
SCT
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
167nC
Standards/Approvals:
RoHS
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
20mΩ
Maximum Continuous Drain Current Id:
29A
Product Type:
MOSFET
Maximum Operating Temperature:
200°C
Pin Count:
4
Mount Type:
Through Hole
