Automotive Standard:
AEC-Q
Maximum Power Dissipation Pd:
160W
Maximum Drain Source Voltage Vds:
1200V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
22 V
Series:
NVHL
Forward Voltage Vf:
4.7V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
57nC
Package Type:
TO-247-3L
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
65mΩ
Standards/Approvals:
AEC-Q101
Maximum Continuous Drain Current Id:
34A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
87mOhm @ 15A, 18V
Gate Charge (Qg) (Max) @ Vgs:
57 nC @ 18 V
Vgs(th) (Max) @ Id:
4.4V @ 7mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
160W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1230 pF @ 800 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
ECCN:
EAR99
