Automotive Standard:
No
Maximum Power Dissipation Pd:
62W
Maximum Drain Source Voltage Vds:
800V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
STP80N
Forward Voltage Vf:
1.5V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
5.7nC
Package Type:
TO-220
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
1.1mΩ
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
5A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 50µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
5.7 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
1.1Ohm @ 1.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 400 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Power Dissipation (Max):
62W (Tc)
Technology:
MOSFET (Metal Oxide)
