NXP USA Inc. PSMN2R9-30MLC,115

PSMN2R9-30MLC-115 NXP USA Inc. PSMN2R9-30MLC,115
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1210, 8-LFPAK33 (5-Lead)
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
36.1 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
91W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2419 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK33
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN2R9-30MLC,115. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1210, 8-lfpak33 (5-lead). It has a maximum Rds On and voltage of 2.9mohm @ 25a, 10v. The maximum gate charge and given voltages include 36.1 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 91w (tc). The product's input capacitance at maximum includes 2419 pf @ 15 v. The product is available in surface mount configuration. lfpak33 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 70a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PSMN2R9-30MLC115 Datasheet(Datasheets)

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