NXP USA Inc. PSMN2R6-60PSQ

PSMN2R6-60PSQ NXP USA Inc.
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
326W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7629 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN2R6-60PSQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 2.6mohm @ 25a, 10v. The maximum gate charge and given voltages include 140 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 326w (tc). The product's input capacitance at maximum includes 7629 pf @ 25 v. The product is available in through hole configuration. to-220ab is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 150a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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