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This is manufactured by Goford Semiconductor. The manufacturer part number is G080N10T. It is assigned with possible HTSUS value of 8541.29.0000. The product is rohs compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 7.5mohm @ 30a, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 236w (tc). The product's input capacitance at maximum includes 13912 pf @ 50 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 192 nc @ 10 v. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 140a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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