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This is manufactured by Cambridge GaN Devices. The manufacturer part number is CGD65B200S2-T13. The FET features of the product include current sensing. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 280mohm @ 600ma, 12v. The typical Vgs (th) (max) of the product is 4.2v @ 2.75ma. In addition, it is reach unaffected. The drive voltage (maximum and minimum Rds On) of the product includes 9v, 20v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +20v, -1v. Its typical moisture sensitivity level is 1 (unlimited). It has a long 26 weeks standard lead time. The product is available in surface mount configuration. The product icegan™, is a highly preferred choice for users. The maximum gate charge and given voltages include 1.4 nc @ 12 v. 8-dfn (5x6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 8.5a (tc). This product use ganfet (gallium nitride) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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