WeEn Semiconductors WNSC2M1K0170WQ

WNSC2M1K0170WQ WeEn Semiconductors
WNSC2M1K0170WQ
WeEn Semiconductors

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.2V @ 800µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
1Ohm @ 1A, 18V
title:
WNSC2M1K0170WQ
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Drain to Source Voltage (Vdss):
1700 V
Vgs (Max):
+22V, -10V
Power Dissipation (Max):
79W (Ta)
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
225 pF @ 1000 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 18 V
Supplier Device Package:
TO-247-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
WNSC2
ECCN:
EAR99
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This is manufactured by WeEn Semiconductors. The manufacturer part number is WNSC2M1K0170WQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.2v @ 800µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 1ohm @ 1a, 18v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. The product has a 1700 v drain to source voltage. The maximum Vgs rate is +22v, -10v. The product carries maximum power dissipation 79w (ta). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 225 pf @ 1000 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 12 nc @ 18 v. to-247-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 7a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to wnsc2, a base product number of the product. The product is designated with the ear99 code number.

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WNSC2M1K0170W(Datasheets)

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