NXP BYV32E-100 Dual Diode, Common Cathode, 100V 20A, 3-Pin SOT-78

BYV32E-100 NXP  Dual Diode, Common Cathode, 100V 20A, 3-Pin SOT-78
BYV32E-100
NXP

Product Information

Dimensions:
10.3 x 4.7 x 16mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Maximum Continuous Forward Current:
20A
Peak Reverse Recovery Time:
25ns
Peak Non-Repetitive Forward Surge Current:
135A
Maximum Forward Voltage Drop:
850mV
Height:
16mm
Peak Reverse Current:
30µA
Width:
4.7mm
Length:
10.3mm
Package Type:
SOT-78
Number of Elements per Chip:
2
Diode Type:
Silicon Junction
Maximum Operating Temperature:
+150 °C
Diode Configuration:
Common Cathode
Pin Count:
3
Peak Reverse Repetitive Voltage:
100V
RoHs Compliant
Checking for live stock

This is Dual Diode Common Cathode 100V 20A 3-Pin SOT-78 manufactured by NXP. The manufacturer part number is BYV32E-100. The given dimensions of the product include 10.3 x 4.7 x 16mm. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Furthermore, its maximum continuous forward current constitutes 20a. Moreover, it has a peak reverse recovery time about 25ns . Moreover, a bespoke product has 135a peak non-repetitive forward surge current. It features 850mv of maximum forward voltage drop. In addition, the height is 16mm. It has a typical 30µa peak reverse current . Furthermore, the product is 4.7mm wide. Its accurate length is 10.3mm. The package is a sort of sot-78. It consists of 2 elements per chip. It is designed with a silicon junction diode. It has a maximum operating temperature of +150 °c. The diode features a common cathode configuration. It contains 3 pins. While having the peak reverse repetitive 100v.

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BYV32E-100 Dual rugged ultrafast rectifier diode, 20 A, 100 V Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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