Dual N-Channel MOSFET, 9 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-13

DMN2014LHAB-13 Dual N-Channel MOSFET, 9 A, 20 V, 6-Pin U-DFN2030 Diodes Inc
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
1.1V
Maximum Drain Source Resistance:
0.028 Ω
Package Type:
U-DFN2030
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
9 A
Pin Count:
6
RoHs Compliant
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This is Dual N-Channel MOSFET 9 A 20 V 6-Pin U-DFN2030 Diodes Inc manufactured by DiodesZetex. The manufacturer part number is DMN2014LHAB-13. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 1.1v of maximum gate threshold voltage. It provides up to 0.028 ω maximum drain source resistance. The package is a sort of u-dfn2030. It consists of 2 elements per chip. While 9 a of maximum continuous drain current. It contains 6 pins.

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Datasheet - DMN2014LHAB-13(Technical Reference)

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