Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0810NDIATMA1

Enrgtech Part No: ET24126176
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Manufacturer Part No:
BSG0810NDIATMA1
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Manufacturer: Infineon

BSG0810NDIATMA1 Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon

Product Information

Automotive Standard:

Maximum Power Dissipation Pd:

6.25W

Maximum Drain Source Voltage Vds:

25V

Maximum Gate Source Voltage Vgs:

±16 V

Series:

BSG0810NDI

Forward Voltage Vf:

Channel Type:

Type N

Typical Gate Charge Qg @ Vgs:

8.4nC

Package Type:

TISON-8

Number of Elements per Chip:

Minimum Operating Temperature:

-55°C

Standards/Approvals:

RoHS, IEC61249-2-21, JEDEC1

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This is Dual N-Channel MOSFET 50 A 25 V 8-Pin TISON-8 manufactured by Infineon. The manufacturer part number is BSG0810NDIATMA1. The product complies with automotive standard - no. The product bsg0810ndi, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of tison-8. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. It contains 8 pins.

Datasheet - BSG0810NDIATMA1(Technical Reference)

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Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0810NDIATMA1

BSG0810NDIATMA1

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