Quad N-Channel MOSFET, 50 A, 1200 V AG-EASY2BM-2 Infineon F423MR12W1M1B11BOMA1
Product Information
Maximum Drain Source Voltage:
1200 V
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Series:
F4-23MR12W1M1
Channel Type:
N
Maximum Gate Threshold Voltage:
5.55V
Package Type:
AG-EASY2BM-2
Number of Elements per Chip:
4
Maximum Continuous Drain Current:
50 A
Maximum Drain Source Resistance:
0.0225 Ω
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This is Quad N-Channel MOSFET 50 A 1200 V AG-EASY2BM-2 manufactured by Infineon. The manufacturer part number is F423MR12W1M1B11BOMA1. It has a maximum of 1200 v drain source voltage. The product carries enhancement channel mode. The product is available in screw mount configuration. The product f4-23mr12w1m1, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.55v of maximum gate threshold voltage. The package is a sort of ag-easy2bm-2. It consists of 4 elements per chip. While 50 a of maximum continuous drain current. It provides up to 0.0225 ω maximum drain source resistance.
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