N-Channel MOSFET, 21 A, 650 V PowerPAK 10 x 12 Vishay SIHK125N60E-T1-GE3

SIHK125N60E-T1-GE3 N-Channel MOSFET, 21 A, 650 V PowerPAK 10 x 12 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
21 A
Mounting Type:
Surface Mount
Channel Type:
N
Package Type:
PowerPAK 10 x 12
Number of Elements per Chip:
1
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 21 A 650 V PowerPAK 10 x 12 manufactured by Vishay. The manufacturer part number is SIHK125N60E-T1-GE3. It has a maximum of 650 v drain source voltage. While 21 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The package is a sort of powerpak 10 x 12. It consists of 1 elements per chip. It contains 8 pins.

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Datasheet - SIHK125N60E-T1-GE3(Technical Reference)

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