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The Vishay SIHK055N60E-T1-GE3 is a high-performance N-channel power MOSFET designed for demanding electronic applications requiring robust efficiency and reliability. Engineered in a specialised PowerPAK 10 x 12 package, this surface-mount component supports a maximum drain-source voltage of 650V and a continuous drain current of 42A. Its advanced silicon technology ensures low on-resistance and optimised switching characteristics, making it an essential semiconductor for high-density power conversion systems and modern industrial electronic designs.
This Vishay SIHK055N60E-T1-GE3 MOSFET provides superior thermal management and high-speed switching capabilities to enhance the overall efficiency of your power systems. It is suitable for engineers seeking a compact yet powerful solution for high-voltage regulation.
For more information please check the datasheets.
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