N-Channel MOSFET, 6.5 A, 850 V Thin-Lead TO-220 Vishay SiHA17N80AEF-GE3

SiHA17N80AEF-GE3 N-Channel MOSFET, 6.5 A, 850 V Thin-Lead TO-220 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
850 V
Maximum Continuous Drain Current:
6.5 A
Mounting Type:
Through Hole
Channel Type:
N
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 6.5 A 850 V Thin-Lead TO-220 manufactured by Vishay. The manufacturer part number is SiHA17N80AEF-GE3. It has a maximum of 850 v drain source voltage. While 6.5 a of maximum continuous drain current. The product is available in through hole configuration. The product is available in [Cannel Type] channel. The package is a sort of to-220 fp. It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - SiHA17N80AEF-GE3(Technical Reference)

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