Vishay SIHP24N80AEF-GE3, N-Channel MOSFET, TO-220AB

Vishay

Product Information

Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
20 A
Mounting Type:
Through Hole
Channel Type:
N
Package Type:
TO-220AB
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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The Vishay SIHP24N80AEF-GE3, N-Channel MOSFET is a high-voltage power MOSFET engineered for efficient switching and reliable performance in demanding power electronics applications. Designed with an N-channel structure, it supports high drain-source voltages while maintaining controlled conduction for stable operation.

Crucial Features and Benefits of the Vishay SIHP24N80AEF-GE3 N-Channel MOSFET

  • Supports 800 V drain-source voltage.
  • 20 A continuous current rating enables dependable power handling.
  • N-channel MOSFET design enables efficient, fast switching.
  • TO-220AB package supports effective heat dissipation.
  • Suitable for high-efficiency power conversion.
  • Designed for reliable operation in electrically demanding environments.

Application Versatility of the Part

The Vishay SIHP24N80AEF-GE3 is typically used in:

  • Switched-mode power supplies (SMPS)
  • Power inverters and converters
  • Industrial motor control systems
  • High-voltage switching circuits
  • Power management and regulation applications

What Sets this MOSFET Apart?

This MOSFET delivers stable electrical characteristics under high-voltage conditions. Its robust construction, efficient switching behaviour, and practical packaging make it a dependable choice for industrial and commercial power electronics where reliability and control are critical.

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Datasheet - SIHP24N80AEF-GE3(Technical Reference)

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FAQs

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You can order Vishay brand products with SIHP24N80AEF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
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