N-Channel MOSFET, 13 A, 800 V, 3-Pin D2PAK Vishay SIHB15N80AE-GE3

Vishay

Product Information

Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
13 A
Mounting Type:
Surface Mount
Series:
E
Channel Type:
N
Maximum Gate Threshold Voltage:
2 → 4V
Maximum Drain Source Resistance:
0.304 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 13 A 800 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB15N80AE-GE3. It has a maximum of 800 v drain source voltage. While 13 a of maximum continuous drain current. The product is available in surface mount configuration. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2 → 4v of maximum gate threshold voltage. It provides up to 0.304 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - SIHB15N80AE(Technical Reference)

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FAQs

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