Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T
Product Information
Maximum Drain Source Voltage:
60 V
Maximum Continuous Drain Current:
300 mA
Mounting Type:
Surface Mount
Transistor Material:
Silicon
Maximum Gate Threshold Voltage:
2.1V
Maximum Drain Source Resistance:
1.2e+006 Ω
Package Type:
US6
Number of Elements per Chip:
2
Channel Type:
N
Pin Count:
6
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You can order Toshiba brand products with SSM6N7002KFU,LF(T directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T. You can also check on our website or by contacting our customer support team for further order details on Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22733106 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22733106.
Yes. We ship SSM6N7002KFU,LF(T Internationally to many countries around the world.
This is Dual Silicon N-Channel MOSFET 300 mA 60 V 6-Pin US6 manufactured by Toshiba. The manufacturer part number is SSM6N7002KFU,LF(T. It has a maximum of 60 v drain source voltage. While 300 ma of maximum continuous drain current. The product is available in surface mount configuration. The transistor is manufactured from highly durable silicon material. The product carries 2.1v of maximum gate threshold voltage. It provides up to 1.2e+006 ω maximum drain source resistance. The package is a sort of us6. It consists of 2 elements per chip. The product is available in [Cannel Type] channel. It contains 6 pins.
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